Composition for forming underlayer coating for litography containing epoxy compound and carboxylic acid compound
AssigneeNissan Chemical Industries, Ltd.
InventorTakahiro Kishioka
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Abstract
There is provided an underlayer coating forming composition for lithography that is used in lithography process of manufacture of semiconductor device; and an underlayer coating having a high dry etching rate compared with photoresist. Concretely, it is a composition for forming an underlayer without use of crosslinking reaction by an strong acid catalyst, and an underlayer coating forming composition containing a component having an epoxy group (a polymer, a compound) and a component having a phenolic hydroxyl group, a carboxyl group, a protected carboxyl group or an acid anhydride structure (a polymer, a compound).
Claims2
A resist underlayer anti-reflective coating forming composition for use in a lithography process of manufacture of a semiconductor device comprising:
- a solvent;
- and
- a polymer compound having a protected carboxyl group and an epoxy group, wherein
- the resist underlayer anti-reflective coating forming composition contains no strong acid catalyst, and
- the protected carboxyl group is represented by formula (i):
- where R3 is a benzyl group.
A resist underlayer anti-reflective coating forming composition for use in a lithography process of manufacture of a semiconductor device comprising:
- a solvent;
- and
- a polymer compound having a protected carboxyl group and an epoxy group, wherein
- the resist underlayer anti-reflective coating forming composition contains no strong acid catalyst, and
- the protected carboxyl group is represented by formula (i):
- where R3 is a phenyl group.
Dependencies are inferred from the claim text.