Nanoelectronic structure and method of producing such
AssigneeQuNano AB
InventorsLars Ivar Samuelson, Patrik Svensson, Jonas Ohlsson, Truls Lowgren
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Abstract
The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.
Claims7
A semiconductor device, comprising:
- A) a substrate;
- B) a semiconductor light emitting device funnel structure, comprising:
- a) a semiconductor nanowire protruding upstanding from a surface of the substrate;
- b) a three dimensional, doped semiconductor volume element shell enclosing a first end portion of a circumferential surface of the nanowire, wherein the volume element shell of the funnel structure is in epitaxial connection with the nanowire of the funnel structure, and wherein the volume element shell does not enclose at least a second portion of a circumferential surface of the nanowire;
- and
- C) a first electrode in contact with the volume element shell,
- wherein the first end portion enclosed by the volume element is equal to or less than half a length of the nanowire.
Dependencies are inferred from the claim text.