Electroplating methods and chemistries for deposition of group IIIA-group via thin films
AssigneeSoloPower, Inc.
InventorsJiaxiong Wang, Serdar Aksu, Bulent M. Basol
Life of this patent
Estimating the term…
Abstract
An electrochemical co-deposition method and solution to plate uniform, defect free and smooth (In,Ga)—Se films with repeatability and controllable molar ratios of (In,Ga) to Se are provided. Such layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the present invention provides an alkaline electrodeposition solution that includes an In salt, a Se acid or oxide, a tartrate salt as complexing agent for the In species, and a solvent to electrodeposit an In—Se film possessing sub-micron thickness on a conductive surface.
Claims20
An electrodeposition solution for deposition of a Group IIIA-Group VIA thin film on a conductive surface, the electrodeposition solution comprising:
- a solvent;
- a Group IIIA material source that provides a Group IIIA material in ionic form in the solvent and in an amount equal to or greater than 0.05 mol/liter, wherein the Group IIIA material source comprises both an In source and a Ga source;
- a Group VIA material source that dissolves in the solvent and provides a Group VIA material in ionic form;
- and
- a complexing agent that forms a complex ion of the Group IIIA material wherein such complex ion dissolves in the solvent;
- and wherein the pH of the solution is at least 7.
Dependencies are inferred from the claim text.