US 8,421,069 B2 · Semiconductor device

Abstract

An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized.

Claims16

Dependent claims

A semiconductor device comprising:

a semiconductor substrate;
a first gate electrode layer over the semiconductor substrate;
a first electrode layer over the semiconductor substrate;
a first gate insulating layer over the first gate electrode layer and the first electrode layer;
an oxide semiconductor layer over the first gate insulating layer;
a first insulating layer over the first electrode layer;
a source electrode layer and a drain electrode layer over the oxide semiconductor layer;
a second gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer;
and
a second gate electrode layer over the second gate insulating layer,
wherein at least part of the drain electrode layer overlaps with the first electrode layer, and
wherein the first insulating layer and the first gate insulating layer are provided between the drain electrode layer and the first electrode layer.

9 more elements

A semiconductor device comprising an EDMOS circuit comprising:

a semiconductor substrate;
a first thin film transistor over the semiconductor substrate;
and
a second thin film transistor over the semiconductor substrate,
wherein the first thin film transistor comprises:
a first gate electrode layer;
a first gate insulating layer over the first gate electrode layer;
an first oxide semiconductor layer over the first gate insulating layer;
a first source electrode layer and a first drain electrode layer over the first oxide semiconductor layer;
a second gate insulating layer over the first oxide semiconductor layer, the first source electrode layer, and the first drain electrode layer;
and
a second gate electrode layer over the second gate insulating layer,
wherein the second thin film transistor comprises:
a first insulating layer;
a second oxide semiconductor layer over the first insulating layer;
a second source electrode layer and a second drain electrode layer over the second oxide semiconductor layer;
a third gate insulating layer over the second oxide semiconductor layer, the second source electrode layer, and the second drain electrode layer;
and
a third gate electrode layer over the third gate insulating layer,
wherein the first drain electrode layer is electrically connected to the second source electrode layer, and
wherein the third gate electrode layer is electrically connected to the second source electrode layer.

18 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims16