Production method of thin film transistor using amorphous oxide semiconductor film
AssigneeCanon Kabushiki Kaisha
InventorsNaho Itagaki, Toru Den, Nobuyuki Kaji, Ryo Hayashi, Masafumi Sano
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Abstract
A production method of a thin film transistor including an active layer including an amorphous oxide semiconductor film, wherein a step of forming the active layer includes a first step of forming the oxide film in an atmosphere having an introduced oxygen partial pressure of 1×10−3 Pa or less, and a second step of annealing the oxide film in an oxidative atmosphere after the first step.
Claims15
A production method for a thin film transistor comprising an active layer comprising an oxide semiconductor film including at least one element of In and Zn, the method comprising the sequence of steps of:
- (1) a first step of forming a metal oxide film, wherein the metal oxide film has a first resistivity of 1×10−4 Ωcm or more and 1 Ωcm or less;
- (2) a second step of annealing the metal oxide film in an oxidative atmosphere to obtain an oxide semiconductor film with a second resistivity which is 1 Ωcm or more and 1×104 Ωcm or less;
- and
- (3) a third step of forming an insulating oxide layer on the oxide semiconductor film.
A production method for a thin film transistor
- comprising an active layer comprising an oxide semiconductor film including at least one element of In and Zn, the method comprising the sequence of steps of:
- (1) a first step of forming a metal oxide film, wherein the metal oxide film has a first resistivity of 1×10−4 Ωcm or more and 1 Ωcm or less;
- and
- (2) a second step of annealing the metal oxide film in an oxidative atmosphere to obtain an oxide semiconductor film with a second resistivity which is 1 Ωcm or more and 1×104 Ωcm or less, wherein a temperature range of the annealing is 150° C. or higher and 450° C. or lower.
Dependencies are inferred from the claim text.