Method for process window optimized optical proximity correction

A method for optical proximity correction that is implemented by a computer, the method comprising:

• obtaining a design layout including features;
• dissecting one or more of the features into edge segments;
• assigning control points to certain of the edge segments;
• simulating, using the computer, a lithography process using the design layout and one or more models of the lithography process at a plurality of process conditions to produce a plurality of simulated resist images;
• determining a simulated resist contour for each edge segment of the one or more features in the design layout using the plurality of simulated resist images;
• determining an error in a contour metric at each control point for each certain edge segment using the plurality of simulated resist images, wherein the error in the contour metric is an offset between the simulated resist contour and the design layout;
• determining if a figure of merit for the contour metric of each certain edge segment over the plurality of resist images is satisfied;
• if the figure of merit is not satisfied, calculating, by the computer, an edge correction amount at each control point of each certain edge segment of the one or more features, wherein the edge correction amount is determined by the errors of the contour metric using the plurality of simulated resist contours over the plurality of process conditions;
• and
• adjusting a position of one or more of the edge segments of the one or more features according to the corresponding edge correction amount to produce a post-OPC layout.