Integrated microelectronic device with through-vias
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorsAlexis Farcy, Maxime Rousseau
Life of this patent
Estimating the term…
Abstract
An integrated microelectronic device is formed from a substrate having a first side and a second side and including a doped active zone (2) in the first side of the substrate. A circuit component is situated in the doped active zone. A through silicon via extends between the second side and the first side, the via being electrically isolated from the substrate by an insulating layer. A buffer zone is situated between the insulating layer and the doped active zone. This buffer zone is positioned under a shallow trench isolation zone provided around the doped active zone. The buffer zone functions to reduce the electrical coupling between the through silicon via and the doped active zone.
Claims13
An integrated microelectronic device, comprising:
- a substrate having a first side and a second side;
- at least one component situated on the first side and possessing a doped active zone in the substrate;
- at least one electrically conductive through-via connecting the second side of the substrate to the first side, said through-via and electrically isolated from the substrate by an insulating layer;
- a buffer zone situated between said insulating layer and said doped active zone, the buffer zone being different from the insulating layer and different from the doped active zone, the buffer zone placed so as to reduce electrical coupling between the electrically conductive through-via and the doped active zone.
An integrated microelectronic device, comprising:
- a substrate having a bottom side and a top side, the substrate include a doped active zone supporting microelectronic circuits, the doped active zone extending from the top side to a first depth and a bulk region extending at least from the first depth to the bottom side;
- a shallow trench isolation zone adjacent the doped active zone and extending from the top side to a second depth shallower than the first depth;
- a buffer zone underneath the shallow trench isolation zone and extending from the second depth to at least the first depth;
- a through silicon via extending between the top side and the bottom side, the through silicon via lined with an insulating layer which is adjacent the shallow trench isolation zone and buffer zone.
Dependencies are inferred from the claim text.