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US 8,410,544 B2Granted
finFETs and methods of making same
AssigneeInternational Business Machines Corporation
InventorsKevin K. Chan, Thomas Safron Kanarsky, Jinghong Li, Christine Qiqing Ouyang, Dae-Gyu Park, Zhibin Ren, Xinhui Wang, Haizhou Yin
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Abstract
A method of fabricating and a structure of a merged multi-fin finFET. The method includes forming single-crystal silicon fins from the silicon layer of an SOI substrate having a very thin buried oxide layer and merging the end regions of the fins by growing vertical epitaxial silicon from the substrate and horizontal epitaxial silicon from ends of the fins such that vertical epitaxial silicon growth predominates.
Claims20
A structure, comprising:
- two or more silicon fins on a top surface of an insulating layer, said insulating layer on a silicon substrate, each fin of said two or more fins having opposite sidewalls connecting opposite first and second ends;
- a gate dielectric layer on said sidewalls of each fin of said two or more fins;
- an electrically conductive gate over said gate dielectric layer;
- first and second regions of said silicon substrate on opposite sides of said gate;
- a first merged source/drain comprising first epitaxial silicon regions extending from said first region of said silicon substrate, through said insulating layer, and abutting second epitaxial regions extending from said first ends of each fin of said two or more fins;
- and
- a second merged source/drain comprising third epitaxial silicon regions extending from said second region of said silicon substrate, through said insulating layer, and abutting fourth epitaxial regions extending from said second ends of each fin of said two or more fins.
4 more elements
Dependencies are inferred from the claim text.