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US 8,410,538 B2Granted
Semiconductor memory device and method for manufacturing same
AssigneeKabushiki Kaisha Toshiba
InventorsMegumi Ishiduki, Yoshiaki Fukuzumi, Ryota Katsumata, Masaru Kidoh, Masaru Kito, Hideaki Aochi
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Abstract
According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, a memory film, and a SiGe film. The stacked body includes a plurality of conductive layers and a plurality of insulating layers alternately stacked above the substrate. The memory film includes a charge storage film. The memory film is provided on a sidewall of a memory hole punched through the stacked body. The SiGe film is provided inside the memory film in the memory hole.
Claims7
A semiconductor memory device comprising:
- a substrate;
- a stacked body including a plurality of conductive layers and a plurality of insulating layers alternately stacked above the substrate;
- a memory film including a charge storage film and provided on a sidewall of a memory hole punched through the stacked body;
- and
- a SiGe film provided inside the memory film in the memory hole, the SiGe film having a relatively high Ge concentration on a central axis side of the memory hole.
2 more elements
Dependencies are inferred from the claim text.