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US 8,410,535 B2Granted
Capacitor and manufacturing method thereof
AssigneeNanya Technology Corporation
InventorsKuo-Hui Su, Yi-Nan Chen, Hsien-Wen Liu
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Abstract
A capacitor and a manufacturing method thereof are provided. The capacitor includes a first electrode, a first metal layer, a dielectric layer and a second electrode. The first electrode is disposed on a substrate. The first metal layer is disposed on the first electrode. The dielectric layer is disposed on the first metal layer, wherein the material of the first metal layer does not react with the material of the dielectric layer. The second electrode is disposed on the dielectric layer.
Claims12
A capacitor, comprising:
- a first electrode, disposed on a substrate, wherein a material of the first electrode comprises titanium nitride or tantalum nitride;
- a first metal layer, disposed on the first electrode;
- a dielectric layer, disposed on the first metal layer, wherein a material of the first metal layer does not react with a material of the dielectric layer, so that dielectric constant decrease of the dielectric layer is avoided and a less leakage current is generated during the step of forming a second electrode or during the following high-temp processes;
- and
- the second electrode, disposed on the dielectric layer.
2 more elements
A manufacturing method of a capacitor, comprising:
- forming a first electrode on a substrate, wherein a material of the first electrode comprises titanium nitride or tantalum nitride;
- forming a first metal layer on the first electrode;
- forming a dielectric layer on the first metal layer, wherein a material of the first metal layer does not react with a material of the dielectric layer, so that dielectric constant decrease of the dielectric layer is avoided and a less leakage current is generated during the step of forming a second electrode 108 or during the following high-temp processes;
- and
- forming the second electrode on the dielectric layer.
2 more elements
Dependencies are inferred from the claim text.