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US 8,410,521 B2Granted
Semiconductor light emitting device
AssigneeLG Innotek Co., Ltd.
InventorSung Kyoon Kim
Life of this patent
Estimating the term…
Abstract
Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a substrate, a first semiconductor layer on substrate, an air-gap part disposed in at least portion between the substrate and the first semiconductor layer, and a plurality of compound semiconductor layers comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the first semiconductor layer.
Claims19
A semiconductor light emitting device, comprising:
- a substrate;
- a first semiconductor layer on the substrate;
- an opening part within the first semiconductor layer;
- an air-gap part disposed between a portion of the substrate and a portion of the first semiconductor layer;
- and
- a plurality of compound semiconductor layers on the first semiconductor layer and comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer,
- wherein the air-gap part has irregular peaks and gaps along an interface between the first semiconductor layer and the substrate, and
- wherein the plurality of compound semiconductor layers has a first portion disposed on the opening part and a second portion disposed on the first semiconductor layer.
5 more elements
A semiconductor light emitting device, comprising:
- a substrate having a top surface with a concave-convex structure;
- a first semiconductor layer on the substrate;
- an air-gap part between the substrate and the first semiconductor layer;
- an opening part within the first semiconductor layer;
- and
- a plurality of compound semiconductor layers having a first portion disposed on the opening part and a second portion disposed on the first semiconductor layer, the plurality of compound semiconductor layers comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer,
- wherein the air-gap part extends for a predetermined length along an interface between the first semiconductor and the substrate.
4 more elements
A semiconductor light emitting device, comprising:
- a substrate;
- a concave-convex part on the substrate;
- a first semiconductor layer on the substrate;
- an air-gap part between the substrate and the first semiconductor layer;
- an opening part within the first semiconductor layer;
- a first conductive type semiconductor layer having a first portion on the first semiconductor layer and a second portion on the opening part;
- an active layer on the first conductive type semiconductor layer;
- a second conductive type semiconductor layer on the active layer;
- a first electrode electrically connected to the first conductive type semiconductor layer;
- and
- a second electrode electrically connected to the second conductive type semiconductor layer,
- wherein the air-gap part extends for a predetermined length along an interface between the first semiconductor and the substrate, and
- wherein the air-gap part has irregular peaks and gaps along the interface between the first semiconductor layer and the substrate.
10 more elements
Dependencies are inferred from the claim text.