Transistors, electronic devices including a transistor and methods of manufacturing the same

A transistor, comprising:

• a channel layer formed of an oxide including indium (In), zinc (Zn) and a first element, the first element being a metal element, wherein the channel layer has a multi-layered structure including a first layer and a second layer, the first element is in the first layer and the second layer, an amount of at least one of the first element, indium and zinc in the first layer is different than that in the second layer, and the amount of the first element in the first layer is greater than that in the second layer;
• a source and a drain respectively contacting opposing ends of the channel layer;
• a gate corresponding to the channel layer;
• and
• a gate insulating layer between the channel layer and the gate,
• wherein the first layer is closer to the gate than the second layer, and the second layer contacts the source and the drain.

A transistor, comprising:

• a channel layer formed of an oxide including indium (In), zinc (Zn) and a first element, the first element being a metal element, wherein an amount of at least one of the first element, indium and zinc in the channel layer is changed in a deposition direction of the channel layer, and the channel layer is a single layer;
• a source and a drain respectively contacting opposing ends of the channel layer;
• a gate corresponding to the channel layer;
• and
• a gate insulating layer between the channel layer and the gate.

A transistor, comprising:

• a channel layer formed of an oxide including indium (In), zinc (Zn) and a first element, the first element being a metal element, wherein an amount of at least one of the first element, indium and zinc in the channel layer is changed in a deposition direction of the channel layer;
• a source and a drain respectively contacting opposing ends of the channel layer;
• a gate corresponding to the channel layer;
• and
• a gate insulating layer between the channel layer and the gate,
• wherein the amount of indium (In) in the channel layer decreases towards the gate.

A transistor, comprising:

• a channel layer formed of an oxide including indium (In), zinc (Zn) and a first element, the first element being a metal element, wherein the channel layer has a multi-layered structure including a first layer and a second layer, the first element is in the first layer and the second layer, and an amount of indium in the second layer is greater than that in the first layer;
• a source and a drain respectively contacting opposing ends of the channel layer;
• a gate corresponding to the channel layer;
• and
• a gate insulating layer between the channel layer and the gate,
• wherein the first layer is closer to the gate than the second layer, and the second layer contacts the source and the drain.