Method and system for controlling copper chemical mechanical polish uniformity
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFrancis Ko, Chun-Hsien Lin, Jean Wang, Chih-Wei Lai, Ping-Hsu Chen, Henry Lo
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Abstract
A system and method for controlling resistivity uniformity in a Copper trench structure by controlling the CMP process is provided. A preferred embodiment comprises a system and a method in which a plurality of CMP process recipes may be created comprising at least a slurry arm position. A set of metrological data for at least one layer of the semiconductor substrate may be estimated, and an optimum CMP process recipe may be selected based on the set of metrological data. The optimum CMP process recipe may be implemented on the semiconductor substrate.
Claims9
A method of manufacturing a semiconductor device, the method comprising:
- providing an automated CMP process tool;
- creating a plurality of CMP process recipes, comprising at least a slurry arm position, for use in performing CMP processes on a semiconductor substrate using the automated CMP process tool;
- using previously collected metrological data including metrological data from prior etch processes performed on the semiconductor substrate and using metrological data measured on the semiconductor substrate following the prior etch processes, using a computer to estimate a set of metrological data to be expected for a wafer profile obtained by a CMP process yet to be performed using a slurry arm in the automated CMP process tool for at least one layer of the semiconductor substrate;
- subsequently, selecting a particular CMP process recipe based on the estimated set of metrological data to be expected;
- thereafter, using the computer, predicting a uniformity profile of the at least one layer that will result from performing the selected CMP process recipe using the automated CMP process tool on the semiconductor substrate based on the estimated set of metrological data;
- and
- subsequently, implementing the selected CMP process recipe and performing the CMP on the semiconductor substrate using the automated CMP process tool;
- wherein the uniformity profile is predicted for Cu resistivity by calculations comprising at least an estimated trench critical dimension and an estimated trench depth.
A method of manufacturing a semiconductor device, the method comprising:
- providing an automated CMP process tool;
- creating a plurality of CMP process recipes, comprising at least a slurry arm position, for use in performing CMP processes on a semiconductor substrate using the automated CMP process tool;
- using previously collected metrological data including metrological data from prior etch processes performed on the semiconductor substrate and using metrological data measured on the semiconductor substrate following the prior etch processes, using a computer to estimate a set of metrological data to be expected for a wafer profile obtained by a CMP process yet to be performed using a slurry arm in the automated CMP process tool for at least one layer of the semiconductor substrate;
- thereafter, selecting a particular CMP process recipe based on the estimated set of metrological data to be expected;
- subsequently, using the computer, predicting a uniformity profile of the at least one layer that will result from performing the selected CMP process recipe using the automated CMP process tool on the semiconductor substrate based on the estimated set of metrological data, wherein the uniformity profile is predicted for Cu resistivity by calculations comprising at least an estimated trench critical dimension and an estimated trench depth;
- and
- subsequently implementing the selected CMP process recipe by performing the CMP process on the semiconductor substrate using the automated CMP process tool.
Dependencies are inferred from the claim text.