Method for producing a polished semiconductor wafer
AssigneeSiltronic AG
InventorsBertram Moeckel, Helmut Franke
Life of this patent
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Abstract
A polished semiconductor wafer of high flatness is produced by the following ordered steps: slicing a semiconductor wafer from a rod composed of semiconductor material, material-removal processing of at least one side of the semiconductor wafer, and polishing of at least one side of the semiconductor wafer, wherein the semiconductor wafer has, after the material-removing processing and before the polishing on at least one side to be polished, along its margin, a ring-shaped local elevation having a maximum height of at least 0.1 μm, wherein the local elevation reaches its maximum height within a 10 mm wide ring lying at the edge of the semiconductor wafer.
Claims13
A method for producing a polished semiconductor wafer having two sides and an edge, comprising the following steps in the stated order:
- a) slicing a semiconductor wafer from a rod composed of semiconductor material,
- b) material-removal processing at least one side of the semiconductor wafer, and
- c) polishing at least one side of the semiconductor wafer,
- wherein the semiconductor wafer has along its margin, after material-removal processing and before polishing on at least one side to be polished, a ring-shaped local elevation having a maximum height of at least 0.1 μm, wherein the local elevation reaches its maximum height within a 10 mm wide ring proceeding inwardly from the edge of the semiconductor wafer.
Dependencies are inferred from the claim text.