Method for manufacturing SOI substrate

A method for manufacturing a semiconductor device comprising:

• a first step of forming a separation layer in a semiconductor wafer by irradiating the semiconductor wafer with a cluster ion;
• a second step of forming an insulating layer over the semiconductor wafer by a CVD method using organosilane;
• a third step of bonding the semiconductor wafer and a substrate to each other with the insulating layer interposed therebetween;
• a fourth step of separating the semiconductor wafer at the separation layer or at a region near the separation layer to form a separation wafer having a separation plane and a silicon-on-insulator substrate which includes a semiconductor layer formed over the substrate with the insulating layer interposed therebetween;
• a fifth step of treating the separation wafer having the separation plane;
• and
• a sixth step of performing the first to fifth steps using the separation wafer as the semiconductor wafer of the first to fourth steps,
• wherein the semiconductor wafer has a first surface side that contains a first surface and a second surface side opposed to the first surface side, and the first to fourth steps are performed only on the first surface side of the semiconductor wafer,
• wherein the cluster ion comprises H3+ ions,
• wherein the H3+ ions are contained at least 80% in a total amount of all kinds of ions generated from a source gas containing hydrogen, and
• wherein the H3+ ions are generated by thermoelectrons discharged from a filamentary electrode.

A method for manufacturing a semiconductor device comprising:

• a first step of forming an insulating layer over a semiconductor wafer;
• a second step of forming a separation layer in the semiconductor wafer by irradiating the semiconductor wafer with a cluster ion;
• a third step of activating a surface of the insulating layer by irradiating the surface of the insulating layer with an atom beam or an ion beam;
• a fourth step of bonding the semiconductor wafer and a substrate to each other with the insulating layer interposed therebetween;
• a fifth step of separating the semiconductor wafer at the separation layer or at a region near the separation layer to form a separation wafer having a separation plane and a silicon-on-insulator substrate which includes a semiconductor layer formed over the substrate with the insulating layer interposed therebetween;
• a sixth step of treating the separation wafer having the separation plane;
• and
• a seventh step of performing the first to sixth steps using the separation wafer as the semiconductor wafer of the first to fifth steps,
• wherein the semiconductor wafer has a first surface side that contains a first surface and a second surface side opposed to the first surface side, and the first to fifth steps are performed only on the first surface side of the semiconductor wafer,
• wherein the cluster ion comprises H3+ ions,
• wherein the H3+ ions are contained at least 80% in a total amount of all kinds of ions generated from a source gas containing hydrogen, and
• wherein the H3+ ions are generated by thermoelectrons discharged from a filamentary electrode.