Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device, comprising:

• forming an insulation layer on a first substrate;
• forming at least one buffer film on the insulation layer;
• forming a metal film on the buffer film;
• forming a semiconductor layer on the metal film;
• forming a conductive layer on the insulation layer by reacting the metal film with at least one of the buffer film and the semiconductor layer;
• forming a conductive structure including at least one metal silicide film pattern on the insulation layer by patterning the conductive layer;
• forming a semiconductor pattern on the conductive structure by patterning the semiconductor layer such that the semiconductor pattern protrudes upwardly from the conductive structure and has an upper portion and a lower portion;
• forming a gate electrode at least partially enclosing the semiconductor pattern;
• forming a first impurity region at the lower portion of the semiconductor pattern;
• and
• forming a second impurity region at the upper portion of the semiconductor pattern.