Back to results
US 8,409,945 B2Granted
Method of fabricating a charge trapping non-volatile memory cell
AssigneeUnited Microelectronics Corp.
InventorsHung-Lin Shih, Tsan-Chi Chu
Life of this patent
Estimating the term…
Abstract
A method of fabricating a non-volatile memory cell is disclosed. The method includes the steps of: forming two separate charge trapping structures on a semiconductor substrate; forming first spacers on sidewalls of the two charge trapping structures; forming a gate dielectric layer on the substrate; forming a gate on the two charge trapping structures and the gate dielectric layer between the two charge trapping structures; and forming two doped regions in the substrate beside the gate.
Claims5
A method of fabricating a non-volatile memory cell, comprising:
- forming two separate charge trapping structures on a semiconductor substrate;
- forming first spacers on sidewalls of the two charge trapping structures;
- forming a gate dielectric layer on the substrate;
- forming over the semiconductor substrate a conductive layer covering the two charge trapping structures and the gate dielectric layer;
- successively patterning the conductive layer and the two charge trapping structures to form a gate on the two charge trapping structures and the gate dielectric layer between the two charge trapping structures;
- and
- forming two doped regions in the substrate beside the gate.
4 more elements
Dependencies are inferred from the claim text.