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US 8,409,938 B2Granted
Method for fabricating semiconductor device
AssigneeHynix Semiconductor Inc.
InventorJung-Hee Park
Life of this patent
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Abstract
A method for fabricating a semiconductor device includes: forming a plurality of photoresist patterns over a substrate structure; forming an insulation layer for a spacer over a structure including the photoresist patterns; forming a plurality of spacers on sidewalls of the photoresist patterns by anisotropically etching the insulation layer, and forming a first opening through the insulation layer; and forming second openings in the insulation layer to expose the substrate structure.
Claims5
A method for fabricating a semiconductor device, the method comprising:
- forming a first opening through an insulation layer of a semiconductor structure by removing the insulation layer in a region having a top surface lower than a top surface of a photoresist pattern of the semiconductor structure while forming spacers by leaving the insulation layer over a sidewall of the photoresist pattern, wherein the insulation layer covers the top surface of the photoresist pattern before the removal of the insulation layer;
- and
- forming a second opening through the insulation layer by removing the photoresist pattern, wherein the semiconductor structure includes a conductive member and the photoresist pattern contacts the conductive member before the removal of the photoresist pattern,
- wherein the forming of the first opening opens up a surface of a second conductive member and a second insulation layer is interposed between the first and conductive members horizontally.
1 more element
Dependencies are inferred from the claim text.