Method of forming display device that includes removing mask to form opening in insulating film
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorKoichiro Tanaka
Life of this patent
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Abstract
To improve the use efficiency of materials and provide a technique of fabricating a display device by a simple process. The method includes the steps of providing a mask on a conductive layer, forming an insulating film over the conductive layer provided with the mask, removing the mask to form an insulating layer having an opening; and forming a conductive film in the opening so as to be in contact with the exposed conductive layer, whereby the conductive layer and the conductive film can be electrically connected through the insulating layer. The shape of the opening reflects the shape of the mask. A mask having a columnar shape (e.g., a prism, a cylinder, or a triangular prism), a needle shape, or the like can be used.
Claims29
A method for manufacturing a semiconductor device comprising the steps of:
- providing a mask on a conductive layer;
- forming an insulating film over the conductive layer provided with the mask;
- removing the mask to form an opening in the insulating film;
- removing a part of the conductive layer exposed at the bottom of the opening by etching;
- and
- forming a conductive film in the opening so as to be in contact with the conductive layer.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a thin film transistor including a gate electrode layer, a gate insulating layer, a semiconductor layer, a source electrode layer, and a drain electrode layer;
- providing a mask on the source electrode layer or the drain electrode layer;
- forming an insulating film over the thin film transistor having the source electrode layer or the drain electrode layer provided with the mask;
- removing the mask to form an opening in the insulating film;
- removing a part of the source electrode layer or the drain electrode layer exposed at the bottom of the opening by etching;
- and
- forming a pixel electrode layer in the opening so as to be in contact with the source electrode layer or the drain electrode layer.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a thin film transistor including a gate electrode layer, a gate insulating layer, a semiconductor layer, a source electrode layer, and a drain electrode layer;
- providing a mask on the source electrode layer or the drain electrode layer;
- forming an insulating film over the thin film transistor having the source electrode layer or the drain electrode layer provided with the mask;
- removing the mask to form an opening in the insulating film;
- removing a part of the source electrode layer or the drain electrode layer exposed at the bottom of the opening by etching;
- forming a first electrode layer in the opening so as to be in contact with the source electrode layer or the drain electrode layer;
- forming an electroluminescent layer over the first electrode layer;
- and
- forming a second electrode layer over the electroluminescent layer.
Dependencies are inferred from the claim text.