Composition for formation of resist protection film, and method for formation of resist pattern using the same
AssigneeTokyo Ohka Kogyo Co., Ltd.
InventorsKeita Ishiduka, Toshikazu Takayama
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Abstract
Disclosed are: a composition for forming a resist protection film, which shows less damage to a resist film, can form a good, rectangular resist pattern, and can be used regardless of the structure of a resin used in a resist composition; and a method for forming a resist pattern by using the composition. Specifically, disclosed are: a composition for forming a resist protection film, which comprises (a) an alkali-soluble polymer and (b) an ether-based solvent; and a method for forming a resist pattern by using the composition.
Claims3
A composition for forming a resist protection film on a resist film,
- comprising:
- a. an alkali-soluble polymer;
- and b. an ether-based solvent, wherein
- said alkali-soluble polymer a. has at least one monomer unit represented by the following general formula A-1, and at least one monomer unit selected from the group consisting of the monomer units represented by the following general formulae A-3 and A-4 as a constitutional unit:
- in the above formulae, R1 is an alkylene group or a fluoroalkylene group having 1 to 6 carbon atoms, R2 are each independently hydrogen atoms or straight chain, branched chain or cyclic alkyl groups or fluoroalkyl groups having 1 to 6 carbon atoms, R5 and R7 are each independently an alkylene group or a fluoroalkylene group having 1 to 6 carbon atoms, R6 and R8 are each independently a straight chain, branched chain or cyclic fluoroalkyl group having 1 to 15 carbon atoms;
- wherein, a part of hydrogen atoms or fluorine atoms of the fluoroalkyl group may be substituted with a hydroxyl group, Z is an alkylene group having 1 to 2 carbon atoms or an oxygen atom, and n is an integer of 0 to 3, and
- wherein said ether-based solvent b. is at least one selected from diisopropyl ether and dibutyl ether.
Dependencies are inferred from the claim text.