Mask blank and method of manufacturing a transfer mask
AssigneeHoya Corporation
InventorsMasahiro Hashimoto, Hiroyuki Iwashita, Takahiro Hiromatsu
Life of this patent
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Abstract
A mask blank includes a transparent substrate and a light-shielding film formed on the transparent substrate. The light-shielding film is made of a material composed mainly of a metal that is dry-etchable with a chlorine-based gas. A resist film is used to form a transfer pattern in the light-shielding film. An etching mask film is formed on an upper surface of the light-shielding film and is made of a material containing a transition metal, silicon, and at least one of nitrogen and oxygen. A content ratio of the transition metal to a total of the transition metal and the silicon in the etching mask film is less than 9%.
Claims17
A mask blank, comprising:
- a transparent substrate, and
- a light-shielding film formed on the transparent substrate and made of a material composed mainly of a metal that is dry-etchable with a chlorine-based gas, a resist film being used to form a transfer pattern in the light-shielding film,
- wherein an etching mask film is formed on an upper surface of the light-shielding film and is made of a material containing a transition metal, silicon, and at least one of nitrogen and oxygen,
- wherein a content ratio of the transition metal to a total of the transition metal and the silicon in the etching mask film is 5% or less.
Dependencies are inferred from the claim text.