Blank mask and method of fabricating mask using the same

A blank mask comprising:

• a substrate;
• a multilayer reflection layer disposed over the substrate;
• a capping layer disposed over the multilayer reflection layer;
• a buffer layer disposed over the capping layer and composed of a self-assembled monolayer;
• and
• an absorption layer disposed over the self-assembled monolayer.

A method of fabricating a mask, the method comprising:

• preparing a blank mask comprising a substrate, a multilayer reflection layer disposed over the substrate, a capping layer disposed over the multilayer reflection layer, a self-assembled monolayer disposed over the capping layer, a buffer layer disposed over the self-assembled monolayer, and an absorption layer disposed over the buffer layer;
• forming an absorption pattern and a buffer pattern by etching the absorption layer and the buffer layer using the self-assembled monolayer as an etching stop layer;
• and
• removing the self-assembled monolayer exposed by the absorption pattern and the buffer pattern.

A method of fabricating a mask, the method comprising:

• preparing a blank mask comprising a substrate, a multilayer reflection layer disposed over the substrate, a capping layer disposed over the multilayer reflection layer, a buffer layer disposed over the capping layer and composed of a self-assembled monolayer, and an absorption layer disposed over the self-assembled monolayer;
• partially exposing a surface of the buffer layer by etching a portion of the absorption layer;
• and
• removing an exposed portion of the buffer layer by irradiating ultraviolet light onto the exposed portion of the buffer layer.