Method of producing a sputter target material
AssigneeHitachi Metals, Ltd.
InventorsKeisuke Inoue, Tsuyoshi Fukui, Shigeru Taniguchi, Norio Uemura, Katsunori Iwasaki, Kazuya Saitoh
Life of this patent
Estimating the term…
Loading patent…
AssigneeHitachi Metals, Ltd.
InventorsKeisuke Inoue, Tsuyoshi Fukui, Shigeru Taniguchi, Norio Uemura, Katsunori Iwasaki, Kazuya Saitoh
Estimating the term…
A sputter target material which is of a sintered material, wherein the sputter target material consists of 0.5 to 50 atomic % in total of at least one metal element (M) selected from the group of Ti, Zr, V, Nb and Cr, and the balance of Mo and unavoidable impurities, and has a microstructure seen at a perpendicular cross section to a sputtering surface, in which microstructure oxide particles exist near a boundary of each island of the metal element (M), and wherein the maximum area of the island, which is defined by connecting the oxide particles with linear lines so as to form a closed zone, is not more than 1.0 mm2.
A method of producing a sputter target material, which comprises the steps of:
Dependencies are inferred from the claim text.