Methods of forming a photoresist-comprising pattern on a substrate

A method of forming a photoresist-comprising pattern on a substrate, comprising:

• forming a patterned first photoresist over a substrate, the patterned first photoresist comprising spaced first masking shields in at least one cross section;
• within a chamber, etching the first masking shields to reduce their respective widths in the one cross section;
• within the chamber and after the etching, exposing the spaced first masking shields to a fluorine-containing plasma to form a hydrogen and fluorine-containing organic polymer coating about outermost surfaces of the reduced-width first masking shields, the substrate not being removed from the chamber between said etching and said exposing;
• depositing a second photoresist over the hydrogen and fluorine-containing organic polymer coating received about the first masking shields;
• and
• patterning the second photoresist to form spaced second masking shields in the one cross section which comprise the second photoresist, the first and second masking shields together comprising a photoresist-comprising pattern on the substrate.

A method of forming a photoresist-comprising pattern on a substrate, comprising:

• forming a patterned first photoresist over a substrate, the patterned first photoresist comprising spaced first masking shields in at least one cross section;
• exposing the spaced first masking shields to a plasma, the plasma simultaneously comprising a reactive component which modifies respective widths of the first masking shields in the one cross section and a fluorine-containing component other than the reactive component which forms a hydrogen and fluorine-containing organic polymer coating about outermost surfaces of the modified-width first masking shields;
• depositing a second photoresist over the hydrogen and fluorine-containing organic polymer coating received about the first masking shields;
• and
• patterning the second photoresist to form spaced second masking shields in the one cross section which comprise the second photoresist, the first and second masking shields together comprising a photoresist-comprising pattern on the substrate.

A method of forming a photoresist-comprising pattern on a substrate, comprising:

• forming a first photoresist over a substrate, the first photoresist having a planar elevationally outermost surface;
• exposing the first photoresist to a fluorine-containing plasma to form a hydrogen and fluorine-containing organic polymer coating on the planar elevationally outermost surface;
• depositing a second photoresist over and in direct physical touching contact with the hydrogen and fluorine-containing organic polymer coating received on the planar elevationally outermost surface of the first photoresist;
• patterning the second photoresist to form spaced masking shields in at least one cross section which comprise the second photoresist, the patterning comprising etching the second photoresist to stop on the hydrogen and fluorine-containing organic polymer coating;
• and
• after stopping the etching on the hydrogen and fluorine-containing organic polymer coating, etching the hydrogen and fluorine-containing organic polymer coating received between the spaced masking shields and the first photoresist there-under between the spaced masking shields using the spaced masking shields as a mask to form a photoresist-comprising pattern on the substrate which comprises the second photoresist received over the hydrogen and fluorine-containing organic polymer coating received over the first photoresist.