Planarization method for high wafer topography

A method for planarizing a semiconductor device, comprising:

• providing a substrate having at least one opening therein, each opening defining a lower portion and an upper portion;
• coating a light sensitive material layer over the substrate, the light sensitive material layer covering the lower and upper portions of the at least one opening;
• etching back the light sensitive material layer to remove a first predetermined amount of the light sensitive material layer, the first predetermined amount defined as the thickness measured from the surface of the light sensitive material layer to the upper portion of the at least one opening;
• repeating the coating and etching steps to remove a second predetermined amount of the light sensitive material layer, the second predetermined amount defined as the thickness measured from the surface of the light sensitive material layer to the upper portion of the at least one opening, the second predetermined amount being less than the first predetermined amount;
• depositing an insulating layer over the substrate;
• and
• planarizing the insulating layer until the upper portion of the at least one opening is exposed.

A method for planarizing a semiconductor device, comprising:

• providing a substrate having at least one opening therein, each opening defining a lower portion and an upper portion;
• coating a light sensitive material layer over the substrate, the light sensitive material layer covering the lower and upper portions of the at least one opening;
• etching back the light sensitive material layer to expose the upper portion of the at least one opening such that the semiconductor device has a first total surface variation (TSV), the first TSV defined as the difference between the upper portion of the opening and the surface of the light sensitive layer;
• and
• repeating the steps of coating and etching such that the surface of the semiconductor device has a second TSV, the second TSV being less than the first TSV.

A method for planarizing a semiconductor device, comprising:

• providing a substrate having at least one opening therein, each opening defining a lower portion and an upper portion;
• coating a light sensitive material layer over the substrate, the light sensitive material layer covering the lower and upper portions of the at least one opening;
• etching back the light sensitive material layer to expose the upper portion of the at least one opening;
• repeating the coating and etching steps such that a subsequently deposited insulating layer over the substrate is deposited at a predetermined thickness sufficient to allow the planarization of the insulating layer to be substantially planar;
• depositing the insulating layer over the substrate;
• and
• planarizing the insulating layer until the upper portion of the at least one opening is exposed.