US 8,409,347 B2Granted

Method of dopant injection, N-type silicon single-crystal, doping apparatus and pull-up device

AssigneeSumco Techxiv Corporation

InventorsShinichi Kawazoe, Yasuhito Narushima, Toshimichi Kubota

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Abstract

In a dopant-injecting method for injecting a volatile dopant into a semiconductor melt, a doping device having an accommodating portion for accommodating a solid dopant and a cylindrical portion into which a gas ejected from the accommodating portion is introduced, a lower end surface of the cylindrical portion being opened to guide the gas to the melt, is used. The sublimation rate of the dopant in the accommodating portion is set in a range from 10 g/min to 50 g/min. Since a flow volume of the volatilized dopant gas is controlled by setting the sublimation rate of the dopant gas in the accommodating portion in the range from 10 g/min to 50 g/min, the melt is not blown off when the gas is blown onto the melt.

Claims10

Dependent claims

A doping device for injecting a volatile dopant into a semiconductor melt, the device comprising:

an accommodating portion which accommodates a solid dopant, the accommodating portion comprising an upper portion, a bottom portion disposed to face the upper portion, and a lateral portion disposed between outer peripheries of the upper portion and the bottom portion;
a blow-preventing member which is provided above and spaced apart from the upper portion of the accommodating portion, the blow-preventing member preventing an inert gas which flows from above to below the accommodating portion from being directly blown to the accommodating portion;
a cylindrical portion which has openings in upper and lower end surfaces thereof, the opening in the upper end surface being in communication with the accommodating portion to guide a volatilized dopant gas to the melt;
and
a heat-shielding member which covers at least a lower side of the accommodating portion to block a radiant heat from the melt to the accommodating portion.

2 more elements

A doping device for injecting a volatilized dopant gas into a semiconductor melt, the device comprising:

an accommodating portion that accommodates a solid dopant;
a tube portion in which a gas ejected from the accommodating portion is introduced, the tube portion having an opening in a lower end surface, a lower end of the tube portion being arranged to be immersed in the melt;
wherein:
the tube portion has a cylindrical lateral portion, and
a plurality of through-holes are circumferentially provided in the lateral portion of the tube portion at a portion arranged to be immersed in the melt.

2 more elements

Dependencies are inferred from the claim text.