Susceptor for MOCVD reactor
AssigneeCree, Inc.
InventorsShuji Nakamura, Steven DenBaars, Max Batres, Michael Coulter
Life of this patent
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Abstract
A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.
Claims16
A susceptor for holding a plurality of semiconductor wafers in a reactor for growing epitaxial layers, comprising:
- a faceplate mounted on said susceptor, said faceplate having a plurality of faceplate holes and a surface substantially resistant to the deposition of reaction species, said faceplate covering said susceptor such that said semiconductor wafers are exposed through said faceplate holes to the deposition of reaction species and the remainder of said susceptor is substantially covered to reduce the deposition of reaction species on said susceptor;
- a thermally conductive material at epitaxial growth temperatures in contact with said wafers to transfer heat to the semiconductor wafers such that said heat is conducted through said thermally conductive material primarily only to said wafers, said thermally conductive material comprising a circular ridge wherein only said ridge contacts said wafers to define a space between said thermally conductive material and said wafers to promote even heat transfer to said wafers, said thermally conductive material comprising a top section that is adjacent to one of said wafers, wherein said circular ridge is on said top section and is in contact with one of said wafers;
- and
- a low thermal conductivity material at epitaxial growth temperatures in areas not in direct contact with said wafers, said low thermal conductivity material including a raised section in contact with said faceplate, so that a space is included between said faceplate and said low thermal conductivity material, said low thermal conductivity material reducing the amount of heat transmitted from said reactor, said thermally conductive material placed on the low thermal conductivity material.
A susceptor for holding a plurality of semiconductor wafers in a reactor for growing epitaxial layers, comprising:
- a base structure having a plurality of holes;
- a faceplate on said base structure, said faceplate comprising one or more holes that align with said base structure holes, said faceplate further providing a surface substantially resistant to the deposition of reaction species;
- one or more heat transfer plugs housed in said base structure holes, said plugs comprising a thermally conductive material at epitaxial growth temperatures, said plugs further comprising a circular ridge wherein only said ridge is in contact with said wafers to define a space between said plugs and said wafers to promote even heat transfer to said wafers, wherein each heat transfer plug comprises a top section that is adjacent to one of said wafers, wherein said circular ridge is on said top section and is in contact with one of said wafers;
- a low thermal conductivity material at epitaxial growth temperatures, said low thermal conductivity material including a raised section in contact with said faceplate, so that a space is included between said faceplate and said low thermal conductivity material, reducing the amount of heat transmitted from said reactor, wherein said base structure comprises said low thermal conductivity material, said one or more heat transfer plugs placed on the low thermal conductivity material;
- and
- wherein said susceptor is adapted to rotate about a longitudinal axis as reaction species are deposited.
Dependencies are inferred from the claim text.