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US 8,368,168 B2Granted
III-V-group compound semiconductor device
AssigneeSharp Kabushiki Kaisha
InventorKunihiro Takatani
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Abstract
A III-V-group compound semiconductor device includes a substrate, a channel layer provided over the substrate, a barrier layer provided on the channel layer so as to form a hetero-interface, a plurality of electrodes provided on the barrier layer, an insulator layer provided to cover an entire upper surface of the barrier layer except for at least partial regions of the electrodes, and a hydrogen-absorbing layer stacked on the insulator layer or an integrated layer in which an hydrogen-absorbing layer is integrated with the insulator layer.
Claims13
A III-V-group compound semiconductor device comprising,
- a substrate,
- a channel layer provided over said substrate,
- a barrier layer provided on said channel layer so as to form a hetero-interface,
- a plurality of electrodes provided on said barrier layer,
- an insulator layer provided to cover an entire upper surface of said barrier layer except for at least partial regions of said electrodes, the insulator layer partially overlapping top surfaces of said electrodes,
- a hydrogen-absorbing layer stacked on said insulator layer or an integrated layer in which the hydrogen-absorbing layer is integrated with said insulator layer, the hydrogen-absorbing layer covering the entire upper surface of the barrier layer except for the at least partial regions of the electrodes, the hydrogen-absorbing layer partially overlapping the top surfaces of the electrodes.
3 more elements
Dependencies are inferred from the claim text.