Method for lifting off photoresist beneath an overlayer
AssigneeWestern Digital (Fremont), LLC
InventorsLijie Zhao, Wei Zhang, Hongping Yuan
Life of this patent
Estimating the term…
Abstract
A method of removing photoresist beneath an overlayer includes estimating a rapid temperature change for a photoresist layer to produce cracking in the overlayer. The temperature chance is estimated so that the cracking of the overlayer is sufficient to allow a liftoff solution to penetrate below the overlayer during a liftoff step. The method further includes baking the photoresist layer and chilling the photoresist layer after baking to produce the rapid temperature change. The method then includes lifting off the photoresist layer using the liftoff solution.
Claims10
A method of lifting off photoresist beneath an overlayer, comprising:
- estimating a rapid temperature change for a photoresist layer to produce cracking in an overlayer that is substantially impermeable to a liftoff solution, wherein the cracking of the overlayer is sufficient to allow the liftoff solution to penetrate below the overlayer;
- baking the photoresist layer;
- chilling the photoresist layer after baking to produce the rapid temperature change;
- and
- lifting off the photoresist layer and the overlayer using the liftoff solution.
Dependencies are inferred from the claim text.