Method and photoresist with zipper mechanism
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFong-Cheng Lee, Ching-Yu Chang
Life of this patent
Estimating the term…
Abstract
The present disclosure provides a resist utilized in a photolithography patterning process. The resist includes a polymeric material having a plurality of zipper molecules, each including a first zipper portion and a second zipper portion, wherein the first and second zipper portions each include a plurality of zipper branches bonded together in pairs and cleavable to one of thermal energy, radiation energy, and chemical reaction.
Claims20
A resist utilized in a photolithography patterning process, comprising:
- a polymeric material having a plurality of zipper molecules each including a first zipper portion and a second zipper portion, wherein the first and second zipper portions each include a plurality of zipper branches bonded together in pairs and cleavable to one of thermal energy, radiation energy, and chemical reaction.
A resist utilized in a lithography patterning process, comprising:
- a plurality of zipper molecules cleavable by acid;
- and
- photo-acid generators (PAG) each being bonded with one of the zipper molecules.
A method, comprising:
- forming a resist layer on a substrate, the resist layer having a plurality of zipper molecules and a radiation-sensitive component;
- and
- exposing the resist layer using a radiation energy.
Dependencies are inferred from the claim text.