Low contamination components for semiconductor processing apparatus and methods for making components
AssigneeLam Research Corporation
InventorRobert J. O'Donnell
Life of this patent
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Abstract
Components of semiconductor processing apparatus are formed at least partially of erosion, corrosion and/or corrosion-erosion resistant ceramic materials. Exemplary ceramic materials can include at least one oxide, nitride, boride, carbide and/or fluoride of hafnium, strontium, lanthanum oxide and/or dysprosium. The ceramic materials can be applied as coatings over substrates to form composite components, or formed into monolithic bodies. The coatings ca protect substrates from physical and/or chemical attack. The ceramic materials can be used to form plasma exposed components of semiconductor processing apparatus to provide extended service lives.
Claims14
A component of a plasma etch reactor comprising at least a portion comprising a ceramic material, the portion comprising an outermost plasma exposed surface of the component, and the ceramic material comprises a material selected from the group consisting of dysprosium oxide, dysprosium nitride, dysprosium boride, dysprosium carbide and dysprosium fluoride as a single largest constituent of the ceramic material, and wherein the ceramic material further comprises at least one material selected from the group consisting of oxides, nitrides, borides, fluorides and carbides of the elements of Groups VA, VIIA, IB and IIB of the periodic table.
Dependencies are inferred from the claim text.