US 8,304,298 B2 · Inverter manufacturing method and inverter

Abstract

To provide an enhancement-depletion (E/D) inverter which can be easily manufactured, in the present invention, a method of manufacturing an inverter which is composed of an oxide semiconductor in which a channel layer includes at least one element selected from In, Ga and Zn formed on a same substrate, the inverter being the E/D inverter having plural thin film transistors, is characterized by comprising the steps of: forming a first transistor and a second transistor, the thicknesses of the channel layers of the first and second transistors being mutually different; and executing heat treatment to at least one of the channel layers of the first and second transistors.

Claims15

Dependent claims

A method of manufacturing an enhancement-depletion (E/D) inverter, the method comprising the steps of:

forming a first transistor and a second transistor over a substrate, the first transistor and the second transistor each comprising a channel layer comprising an oxide semiconductor including at least one element selected from In, Ga and Zn, and thicknesses of the channel layers of the first and second transistors being different from each other;
and
performing heat treatment on at least one of the channel layers of the first and second transistors,
wherein the first transistor and the second transistor are included in the enhancement-depletion inverter.

1 more element

A method of manufacturing an enhancement-depletion (E/D) inverter, the method comprising the steps of:

forming a common deposition film over a substrate, acting as the channel layer of a first transistor and the channel layer of a second transistor, the channel layer of the first transistor and the channel layer of the second transistor each comprising an oxide semiconductor including at least one element selected from In, Ga and Zn;
and
performing heat treatment by applying a larger heating value to either one of the channel layer of the first transistor and the channel layer of the second transistor,
wherein the first transistor and the second transistor are included in the enhancement-depletion inverter.

1 more element

An enhancement-depletion inverter comprising a first oxide semiconductor thin film transistor and a second oxide semiconductor thin film transistor which are formed over a substrate, wherein each of the first oxide semiconductor thin film transistor and the second oxide semiconductor transistor includes at least one element selected from In, Ga and Zn,

wherein thicknesses of channel layers of the first oxide semiconductor transistor and the second oxide semiconductor transistor are different from each other,
wherein threshold voltages of the first oxide semiconductor transistor and the second oxide semiconductor transistor are different from each other, and
wherein said first and second oxide semiconductor transistors are structured to operate as at least part of said enhancement-depletion inverter.

Dependencies are inferred from the claim text.

Inverter manufacturing method and inverter

Life of this patent

Inverter manufacturing method and inverter

Life of this patent

Abstract

Claims15