Thin film semiconductor device, electrooptic device, and electronic equipment
AssigneeSeiko Epson Corporation
InventorYasushi Hiroshima
Life of this patent
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Abstract
A thin film semiconductor device includes, on a substrate, a thin film transistor of which channel is N-type, and a thin film transistor of which channel is P-type, wherein a source region of the N-type thin film transistor and a source region of the P-type thin film transistor are arranged so as to be adjacent to each other at least in some region and are electrically connected to a first electrode through one contact hole formed on the some region, and a drain region of the N-type thin film transistor and a drain region of the P-type thin film transistor are arranged so as to be adjacent to each other at least in some region and are electrically connected to a second electrode through one contact hole formed on the some region.
Claims14
A thin film semiconductor device comprising:
- a first thin film transistor of which channel is N-type, and
- a second thin film transistor of which channel is P-type, wherein:
- a source region of the first thin film transistor and a source region of the second thin film transistor are arranged so as to be adjacent to each other in a first region and are electrically connected to a first electrode through one contact hole formed on the first region;
- and
- a drain region of the first thin film transistor and a drain region of the second thin film transistor are arranged so as to be adjacent to each other in a second region and are electrically connected to a second electrode through one contact hole formed on the second region.
A thin film semiconductor device comprising:
- a first thin film transistor of which channel is N-type;
- and
- a thin film transistor of which channel is P-type,
- wherein:
- a source region of the first thin film transistor and a source region of the second thin film transistor are arranged so as to be adjacent to each other in a first region and are electrically connected to a first electrode through one contact hole formed on the first region;
- a drain region of the first thin film transistor and a drain region of the second thin film transistor are arranged so as to be adjacent to each other in a second region and are electrically connected to a second electrode through one contact hole formed on the second region;
- and
- a semiconductor layer constituting the first thin film transistor and the second thin film transistor are integrally formed in a circular form.
Dependencies are inferred from the claim text.