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US 8,299,570 B2Granted
Efuse containing sige stack
AssigneeInternational Business Machines Corporation
InventorsDeok-Kee Kim, Dureseti Chidambarrao, William K. Henson, Chandrasekharan Kothandaraman
Life of this patent
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Abstract
An eFuse, includes: a substrate and an insulating layer disposed on the substrate; a first layer including a single crystal or polycrystalline silicon disposed on the insulating layer; a second layer including a single crystal or polycrystalline silicon germanium disposed on the first layer, and a third layer including a silicide disposed on the second layer. The Ge has a final concentration in a range of approximately five percent to approximately twenty-five percent.
Claims13
A fuse comprising:
- a substrate and an insulating layer disposed on the substrate;
- a first layer consisting essentially of polycrystalline silicon disposed on and in direct contact with an upper surface of said insulating layer;
- a second layer comprising polycrystalline silicon germanium disposed on and in direct contact with an upper surface of said first layer, and
- a third layer consisting essentially of a silicide disposed on and in direct contact with an upper surface of said second layer, wherein said first, second, third layers are disposed between STI regions which extend along and adjacent sides of said silicide,
- wherein said fuse is in direct contact with an upper surface of said insulating layer.
2 more elements
A fuse comprising:
- a substrate and an insulating layer located on said substrate;
- a fuse link region;
- a first contact region, and
- a second contact region, the fuse link region electrically connecting said first contact region to said second contact region;
- the fuse link region comprising a stack, from bottom to top, of a first layer, a second layer, and a third layer, wherein said fuse is located above and in direct contact with said insulating layer, wherein said first layer includes a polycrystalline silicon and is located on and above said insulating layer, said second layer includes a polycrystalline silicon germanium and is located on and above said first layer, and said third layer includes a silicide and is located on and above said second layer;
- wherein said first, second, third layers are disposed between STI regions which extend along and adjacent sides of said silicide.
3 more elements
Dependencies are inferred from the claim text.