Semiconductor device and method of cutting electrical fuse

A semiconductor device, comprising:

• a semiconductor substrate;
• and
• an electrical fuse formed on the semiconductor substrate,
• the electrical fuse including a first conductor extending along a first conductor path including a first cutting target region, a second conductor extending along a second conductor path branched from said first conductor and connected to said first conductor and including a second cutting target region, a first interconnect, a via connected to said first interconnect, and a second interconnect connected to said via, each of said first interconnect, said via, and said second interconnect formed on different layers on said semiconductor substrate, respectively,
• wherein a material of said first conductor is configured, upon a condition of cutting said electrical fuse, to flow toward a region outside the first conductor path and the second conductor path and between said first cutting target region and said second cutting target region to form a flowing-out region and thereby generate a broken point in the first conductor path that cuts the electrical fuse,
• wherein said first interconnect is composed of said first conductor and including said first cutting target region,
• wherein said via is composed of said second conductor and includes said second cutting target region,
• wherein, in a condition before cutting said electrical fuse, said via is electrically connected between said first interconnect and said second interconnect,
• wherein, in the condition of cutting said electrical fuse, a first void region is formed in said first interconnect and a second void region is formed in one of i) between said via and said second interconnect, and ii) in said via,
• wherein said first interconnect includes a narrow interconnect and a wide interconnect connected to the narrow interconnect, the wide interconnect being wider than the narrow interconnect, and
• wherein said first cutting target region is formed near a coupling portion connecting said narrow interconnect to said wide interconnect, said flowing-out region being formed in a folded area of said wide interconnect.