ESD protection device structure
AssigneeUnited Microelectronics Corp.
InventorsTai-Hsiang Lai, Kuei-Chih Fan, Tien-Hao Tang
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Abstract
An ESD protection device structure includes a well having a first conductive type, a first doped region having a second conductive type disposed in the well, a second doped region having the first conductive type, and a third doped region having the second conductive type disposed in the well. The second doped region is disposed within the first doped region so as to form a vertical BJT, and the first doped region, the well and the third doped region forms a lateral BJT, so that pulse voltage that the ESD protection structure can tolerate can be raised.
Claims19
An electrostatic discharge (ESD) protection device structure, disposed in a semiconductor substrate, and the ESD protection device structure comprising:
- a well, having a first conductive type;
- a first doped region, having a second conductive type and disposed in the well;
- a second doped region, having the first conductive type, the second doped region disposed within the first doped region, and the first doped region and the second doped region forming a first vertical bipolar junction transistor (BJT), wherein a part of the first doped region is disposed on the second doped region, and another part of the first doped region is disposed under the second doped region;
- and
- a third doped region, having the second conductive type, the third doped region disposed in the well, and the first doped region, the well and the third doped region forming a lateral BJT, wherein the well is disposed between the first doped region and the third doped region.
Dependencies are inferred from the claim text.