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US 8,298,942 B2Granted
Method for forming electric vias
AssigneesSTMicroelectronics S.r.l., STMicroelectronics (Crolles 2) SAS
InventorsRichard Fournel, Yves Dodo
Life of this patent
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Abstract
A method for forming through vias connecting the front surface to the rear surface of a semiconductor substrate, including the steps of: forming openings in the substrate, thermally oxidizing walls of the openings, filling the openings with a sacrificial material, forming electronic components in the substrate, etching the sacrificial material, filling the openings with a metal, and etching the rear surface of the substrate all the way to the bottom of the openings.
Claims19
A method, comprising:
- forming openings in a semiconductor substrate, each opening having walls;
- thermally oxidizing the walls of the openings;
- filling the openings with a sacrificial material;
- forming electronic components in the substrate;
- etching the sacrificial material;
- forming a plurality of vias by filling the openings with a metal;
- and
- etching a rear surface of the substrate to a bottom of the vias, wherein the etching of the rear surface occurs prior to etching the sacrificial material.
5 more elements
A method, comprising:
- forming a plurality of first openings in a first surface of a substrate;
- forming a sacrificial material in the openings;
- forming a plurality of electronic components on the substrate adjacent to the openings;
- forming a plurality of second openings aligned with the plurality of first openings;
- partially forming a plurality of vias by filling the second openings with a first conductive material;
- removing portions of a second surface of the substrate to expose the sacrificial material in the first openings;
- removing the sacrificial material from the first openings;
- forming the plurality of vias by filling the first openings with a second conductive material, the first conductive material coupled to the second conductive material.
5 more elements
A method, comprising:
- forming a plurality of first openings in a first surface of a substrate;
- forming silicon oxide in the openings;
- forming a plurality of electronic components on the substrate adjacent to the openings;
- forming a plurality of second openings aligned with the plurality of first openings;
- removing the silicon oxide from the first openings;
- filling the first and second openings with a first conductive material;
- and
- removing portions of a second surface of the substrate to expose the conductive material in the first openings.
5 more elements
Dependencies are inferred from the claim text.