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US 8,298,904 B2Granted
Compact thermally controlled thin film resistors utilizing substrate contacts and methods of manufacture
AssigneeInternational Business Machines Corporation
InventorsJoseph M. Lukaitis, Jed H. Rankin, Robert R. Robison, Dustin K. Slisher, Timothy D. Sullivan
Life of this patent
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Abstract
A method of forming a semiconductor structure includes forming a resistor on an insulator layer over a substrate, and forming at least one dielectric layer over the resistor. The method also includes forming a substrate contact through the at least one dielectric layer, through the resistor, through the insulator layer, and into the substrate. The substrate contact comprises a high thermal conductivity material.
Claims16
A method of forming a semiconductor structure, comprising:
- forming a resistor on an insulator layer over a substrate;
- forming at least one dielectric layer over the resistor;
- and
- forming a substrate contact through the at least one dielectric layer, through the resistor, through the insulator layer, and into the substrate, wherein the substrate contact comprises a high thermal conductivity material.
1 more element
A method of forming a semiconductor structure, comprising:
- forming a resistor on an insulator layer over a substrate;
- forming a resistor trench in the resistor;
- forming a dielectric layer on the resistor and in the resistor trench;
- and
- forming a substrate contact through the dielectric layer, through the insulator layer, and into the substrate, wherein the substrate contact comprises a high thermal conductivity material.
2 more elements
Dependencies are inferred from the claim text.