Monitor pattern of semiconductor device and method of manufacturing semiconductor device

A method of manufacturing a semiconductor device comprising:

• forming a plurality of first resistive elements and a dummy pattern, which is electrically isolated from the plurality of first resistive elements and which is formed beside one of the plurality of first resistive elements, on a semiconductor substrate, the forming of the plurality of first resistive elements and the dummy pattern comprising:
• forming a conductor layer on the semiconductor substrate,
• forming a mask layer on the conductor layer, and
• patterning the conductor layer to form the plurality of first resistive elements and the dummy pattern by using the mask layer as a mask and by setting an aspect ratio between 3 and 5.2;
• forming an interlayer insulation film on the plurality of first resistive elements and the dummy pattern;
• forming a plurality of contact vias, which are connected to the plurality of first resistive elements, in the interlayer insulation film;
• and
• forming a plurality of second resistive elements, which are connected to the plurality of contact vias, on the interlayer insulation film,
• wherein the aspect ratio is defined as (A+B)/C;
• where the A is a thickness of the conductor layer, the B is a thickness of the mask layer, and the C is a distance between the one of the plurality of first resistive elements and the dummy pattern.