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US 8,298,890 B1Granted
Charge blocking layers for nonvolatile memories
AssigneeIntermolecular, Inc.
InventorsRonald John Kuse, Monica Sawkar Mathur, Wen Wu
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Abstract
A semiconductor memory element is described, including a substrate including a source region, a drain region, and a channel region, a tunnel oxide over the channel region of the substrate, a charge storage layer over the tunnel oxide, a charge blocking layer over the charge storage layer, and a control gate over the charge blocking layer. The charge blocking layer further includes a first layer including a transition metal oxide, a second layer including a metal silicate, a third layer including the transition metal oxide of the first layer.
Claims11
A method comprising:
- obtaining a substrate including source and drain regions, a tunnel oxide over a channel region of the substrate, and a charge storage layer over the tunnel oxide;
- depositing a charge blocking layer over the charge storage layer, wherein depositing the charge blocking layer comprises depositing a first metal oxide layer comprising a first metal, depositing a first metal silicate layer over the first metal oxide layer, depositing a second metal silicate layer over the first metal silicate layer, depositing a third metal silicate layer over the second metal silicate layer, depositing a second metal oxide layer over the third metal silicate layer, the second metal oxide layer comprising the first metal, the second metal silicate layer being more silicon-rich than the first metal silicate layer and the third metal silicate layer;
- and
- depositing a control gate over the charge blocking layer.
1 more element
Dependencies are inferred from the claim text.