Heteroleptic cyclopentadienyl transition metal precursors for deposition of transition metal-containing films

A method of forming a metal-containing film on a substrate, comprising:

• a) providing a reactor and at least one substrate disposed therein;
• b) introducing a metal-containing precursor into the reactor, wherein the metal-containing precursor comprises a precursor of the general formula:
• M(R1—N—C(R2)═N—R3)n(R4R5R6R7R8Cp)mLk (I)
• wherein:
• M is at least one member selected from the group consisting of:
• Ni;
• Co;
• and Ru;
• (R1—N—C(R2)═N—R3) is an amidine ligand;
• (R4R5R6R7R8 Cp) is a, substituted or unsubstituted, cyclopentadienyl ligand;
• R1, R3, R4, R5, R6, R7, and R8 are independently selected from H;
• a C1-C5 alkyl group;
• and Si(R′)3, where R′ is independently selected from H, and a C1-C5 alkyl group;
• R2 is independently selected from H or a C1-C5 alkyl group;
• L is a neutral ligand;
• 1≦m≦4;
• 1≦n≦4;
• and
• 0≦k≦5;
• c) maintaining the reactor at a temperature of at least 100° C.;
• and
• d) contacting the precursor with the substrate to form a metal-containing film.