US 8,284,538 B2Granted

Electrostatic chuck device

AssigneesTokyo Electron Limited, Sumitomo Osaka Cement Co., Ltd.

InventorsShinji Himori, Shoichiro Matsuyama, Atsushi Matsuura, Hiroshi Inazumachi, Mamoru Kosakai, Yukio Miura, Keigo Maki

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Abstract

An electrostatic chuck device includes an electrostatic chuck section, a metal base section, and a dielectric plate. The electrostatic chuck section has a substrate, a main surface of which serves as a mounting surface for a plate-like sample, an electrostatic-adsorption inner electrode built in the substrate, and a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode. Here, a dielectric plate is fixed to a concave portion formed in the metal base section. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with a conductive adhesive bonding layer interposed therebetween, the volume resistivity of which is 1.0×10−2 Ωcm or less.

Claims15

Dependent claims

An electrostatic chuck device comprising:

an electrostatic chuck section including a substrate, wherein the electrostatic chuck section has a main surface serving as a mounting surface on which a plate-like sample is mounted and an electrostatic-adsorption inner electrode built therein, and a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode;
and
a metal base section, having a concave portion on the main surface thereof to which a dielectric plate is adhesively bonded/fixed with a conductive adhesive bonding layer having a volume resistivity of 1.0×10−2 Ωcm or less, wherein the dielectric plate is fixed/bonded to the other main surface of the electrostatic chuck section so as to incorporate the metal base section into a body and have the metal base section serve as a high frequency generating electrode,
wherein the dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween, wherein the thickness of the dielectric plate decreases from the center to the peripheral edge.

1 more element

A plasma processing device comprising an electrostatic chuck device, said chuck device comprising:

an electrostatic chuck device including:
an insulating substrate, wherein the electrostatic chuck section has a main surface serving as a mounting surface on which a plate-like sample is mounted;
an electrostatic-adsorption inner electrode built in the substrate;
a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode;
and
a metal base section supporting the other main surface of the electrostatic chuck section so as to incorporate the metal base section into a body and having the metal base section serve as a high frequency generating electrode;
a concave portion formed on the main surface of the metal base section, the portion facing the other main surface of the electrostatic chuck section;
a dielectric plate fitting the concave portion;
an insulating adhesive bonding layer which adhesively bonds the dielectric plate and the electrostatic chuck section;
and
a conductive adhesive bonding layer which adhesively bonds the dielectric plate and the metal base section;
wherein a volume resistivity of the conductive adhesive bonding layer is 1.0×10−2 Ωcm or less, and the thickness of the dielectric plate decreases from the center to the peripheral edge.

9 more elements

Dependencies are inferred from the claim text.