Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsHiroshi Sunamura, Kouji Masuzaki
Life of this patent
Estimating the term…
Abstract
Provided is a semiconductor device including a substrate, a gate insulating film which is formed on the substrate, and a gate electrode which is provided on the gate insulating film. The gate electrode includes a first metal silicide including a first metal material, and a second metal silicide including one of a second metal material and the second metal material in a contact portion between the gate insulating film and the gate electrode. The second metal silicide including the second metal material is a metal-rich silicide in which the composition ratio of the second metal material to silicon in the second metal silicide including the second metal is greater than 1.
Claims22
A semiconductor device comprising:
- a substrate;
- a gate insulating film which is formed on said substrate;
- and
- a gate electrode which is provided on said gate insulating film,
- wherein at least a portion of said gate electrode that is in contact with said gate insulating film includes:
- a first metal silicide including a first metal material;
- and
- a second metal silicide including a second metal material, which is different from said first metal material, and
- wherein said second metal silicide including said second metal material comprises a metal-rich silicide in which a composition ratio of said second metal material to silicon in said second metal silicide including said second metal material is greater than 1.
Dependencies are inferred from the claim text.