Back to results
US 8,283,718 B2Granted
Integrated circuit system with metal and semi-conducting gate
AssigneesSpansion LLC, Advanced Micro Devices, Inc.
InventorsAngela T. Hui, Mark S. Chang, Kuo-Tung Chang, Scott A. Bell
Life of this patent
Estimating the term…
Abstract
A method for forming an integrated circuit system is provided including forming a semi-conducting layer over a substrate, forming a spacer stack having a gap filler adjacent to the semi-conducting layer and a inter-layer dielectric over the gap filler, forming a transition layer having a recess over the semi-conducting layer and adjacent to the spacer stack, and forming a metal layer in the recess.
Claims10
An integrated circuit system comprising:
- a first semi-conducting layer over a substrate;
- a spacer stack having a gap filler adjacent to the first semi-conducting layer and an inter-layer dielectric over the gap filler, the gap filler extending from the first semi-conducting layer to an adjacent second semi-conducting layer, substantially filling a bottom portion of a gap between the first semi-conducting layer and the adjacent second semi-conducting layer and preventing adverse contamination of the first semi-conducting layer and the adjacent second semi-conducting layer;
- a transition layer having a recess over the first semi-conducting layer and adjacent to the spacer stack;
- and
- a metal layer in the recess;
- wherein the gap filler comprises a single first dielectric material and the inter-layer dielectric comprises a second dielectric material different from the single first dielectric material.
3 more elements
Dependencies are inferred from the claim text.