Reduction of threshold voltage instabilities in a MOS transistor
AssigneeSTMicroelectronics S.r.l.
InventorsJorge Regolini, Pierre Morin, Daniel Benoit
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Abstract
A MOS transistor includes an etch stop layer presenting a density of less than a determined threshold value, below which the material of said stop layer is permeable to molecules of dihydrogen and/or water. The material may comprise a nitride. A material used for the etch stop layer preferably has a density value of less than about 2.4 g/cm3.
Claims22
A MOS transistor comprising an etch stop layer formed of a SixNyHz material presenting a density value of less than a threshold value, wherein the threshold value is below a density value for which the material of said etch stop layer is permeable to dihydrogen and/or water molecules.
A semiconductor device comprising at least one MOS transistor wherein the MOS transistor has an etch stop layer formed of a SixNy Hz material presenting a density value of less than a threshold value, wherein the threshold value is below a density value for which the material of said etch stop layer is permeable to dihydrogen and/or water molecules.
A MOS transistor, comprising:
- a gate, a source region and a drain region;
- and
- an etch stop layer overlying the gate, source region and drain region wherein that etch stop layer is formed of a SixNyHz material permeable to both dihydrogen and water molecules.
A MOS transistor comprising an etch stop layer formed of a SixNyHz material presenting a density value of between about 2.2 g/cm3 and about 2.65 g/cm3, and wherein the SixNyHz material of said etch stop layer is permeable to dihydrogen and/or water molecules.
A MOS transistor comprising an etch stop layer formed of a porogen material presenting a density value of between about 2.2 g/cm3 and about 2.65 g/cm3, and wherein the porogen material of said etch stop layer is permeable to dihydrogen and/or water molecules.
Dependencies are inferred from the claim text.