Apparatus including heating source reflective filter for pyrometry

A system for processing a substrate, comprising:

• a heat source, the heat source providing radiation in a first range of wavelengths;
• a pyrometer for measuring the temperature of the substrate disposed within a process area of the chamber by detecting radiation in a second range of wavelengths within the first range of wavelengths;
• and
• a window separating the heat source from the substrate, the window consisting essentially of a material which is transparent to radiation in the first range of wavelengths and a reflective coating covering an entire surface between the heat source and the substrate, the reflective coating being reflective to radiation in the second range of wavelengths effective to prevent radiation within the second range of wavelengths from being transmitted to the pyrometer, the reflective coating in the second range of wavelengths on a first surface and on a second surface of the window, and wherein the reflective coating has a transmittance ratio of reflectance to transmission of light in the second range of wavelengths of at least 1000 and wherein the window having the reflective coating is effective to prevent radiation from the heat source within the second range of wavelengths from being transmitted through a substrate at temperatures below about 400° C.

A system for processing a substrate, comprising:

• a heat source, the heat source providing radiation in a first range of wavelengths;
• a process area for containing the substrate;
• a first wall of the process area being a window separating the heat source from the substrate, the window facing and substantially parallel to a first surface of the substrate;
• a pyrometer directed at a second surface of the substrate opposite the first surface to measure the temperature of the substrate disposed within a process area of the chamber by detecting radiation in a second range of wavelengths within the first range of wavelengths, wherein the window consists essentially of a material which is transparent to radiation in the first range of wavelengths, a surface of the first wall being completely covered by a reflective layer being reflective to radiation in the second range of wavelengths, the surface of the first wall selected from only a side of the window facing the heat source, wherein the reflective layer has a transmittance ratio of reflectance to transmission of light in the second range of wavelengths of at least 1000;
• and
• a second wall of the process area, about or substantially parallel to the first wall, and separating the process area from an outside environment, the second wall not being covered by the reflective layer.

A method of measuring the temperature of a wafer in a process chamber comprising:

• heating a substantially flat substrate with a radiation source through a window, the radiation source providing radiation in a first range of wavelengths, the substrate being transparent to radiation in a second range of wavelengths within the first range of wavelengths for a predetermined temperature range below about 400° C.;
• measuring radiation within a process area within the chamber using a pyrometer;
• and
• reflecting radiation from the radiation source within the second range of wavelengths with a reflective coating on a surface of the window back towards the radiation source to prevent radiation from the heat source within the second range of wavelengths from the radiation source from reaching the pyrometer, the surface of the window selected from only a side of the window facing the radiation source, and the window consisting essentially of a material that is transparent to radiation in the first range of wavelengths and the coating.