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US 8,283,265 B2Granted
Method to enhance charge trapping
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsDeepak Ramappa, Kyu-Ha Shim
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Abstract
Methods of improving charge trapping are disclosed. One such method includes forming an oxide-nitride-oxide tunnel stack and a silicon nitride layer on the oxide-nitride-oxide tunnel stack. This silicon nitride layer is implanted with ions. These ions may function as electron traps or as fields. The silicon nitride layer may be part of a flash memory device.
Claims10
A method comprising:
- forming an oxide-nitride-oxide tunnel stack;
- forming a silicon nitride layer on said oxide-nitride-oxide tunnel stack;
- and
- implanting said silicon nitride layer to a depth above said oxide-nitride-oxide tunnel stack thereby forming an implanted region that extends to said depth, wherein said implanted region occupies less than an entirety of said silicon nitride layer.
1 more element
Dependencies are inferred from the claim text.