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US 8,283,259 B2Granted
Methods of removing a metal nitride material
AssigneeMicron Technology, Inc.
InventorsSanjeev Sapra, Janos Fucsko
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Abstract
A method of removing a metal nitride material is disclosed. The method comprises forming a semiconductor device structure comprising an exposed metal material and an exposed metal nitride material. The semiconductor device structure is subjected to a solution comprising water, ozone, and at least one additive to remove the exposed metal nitride material at a substantially greater rate than the exposed metal material.
Claims16
A method of removing a metal nitride material, comprising:
- forming a semiconductor device structure comprising an exposed metal material and an exposed metal nitride material;
- and
- subjecting the semiconductor device structure to a solution comprising water, ozone, and at least one additive to remove the exposed metal nitride material at a substantially greater rate than the exposed metal material.
A method of removing a metal nitride material, comprising:
- forming a semiconductor device structure comprising an exposed transition metal material and an exposed metal nitride material;
- and
- subjecting the semiconductor device structure to a solution comprising water, ozone, and at least one additive to remove the exposed metal nitride material without removing the exposed transition metal material.
Dependencies are inferred from the claim text.