Etching method and etching apparatus
AssigneeTokyo Electron Limited
InventorTakahito Mukawa
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Abstract
There are provided an etching method and an etching apparatus suitable for etching an antireflection coating layer by using a resist film as a mask. The etching method includes forming the antireflection coating layer (Si-ARC layer) on an etching target layer; forming a patterned resist film (ArF resist film) on the antireflection coating layer; and forming a desired pattern on the antireflection coating layer by introducing an etching gas including a CF4 gas, a COS gas and an O2 gas into a processing chamber and etching the antireflection coating layer by the etching gas while using the resist film as a mask.
Claims8
An etching method comprising:
- forming an antireflection coating layer on an etching target layer;
- forming a patterned resist film on the antireflection coating layer;
- and
- forming a desired pattern on the antireflection coating layer by introducing an etching gas including a CF4 gas, a COS gas and an O2 gas into a processing chamber and etching the antireflection coating layer by the etching gas while using the resist film as a mask,
- wherein the COS gas, at a certain flow rate, can become deposited on an etched surface of the antireflection coating layer and the O2 gas is used to suppress the deposition of the COS gas, and
- a flow rate of the COS gas and a flow rate of the O2 gas included in the etching gas are controlled proportionately to each other to balance the deposition of the COS gas and suppression of the deposition by the O2 gas.
Dependencies are inferred from the claim text.