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US 8,283,242 B2Granted
Method of removing photoresist
AssigneeHynix Semiconductor Inc.
InventorTae-Woo Jung
Life of this patent
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Abstract
A method includes forming a photoresist pattern over a certain portion of a material layer to expose an ion implantation region, implanting impurities in the ion implantation region of the material layer using the photoresist pattern as an ion implantation barrier, and removing the photoresist pattern using plasma of a gas mixture including a hydrocarbon-based gas.
Claims24
A method, comprising:
- forming a photoresist pattern over a certain portions of a material layer to expose an ion implantation region;
- implanting impurities in the ion implantation region of the material layer using the photoresist pattern as an ion implantation barrier;
- and
- removing the photoresist pattern using plasma of a gas mixture including diimide (N2H2), the removing the photoresist pattern comprising:
- performing a first step at a first temperature using plasma of N2H2 and oxygen (O2), wherein a ratio of the N2H2 to the O2 ranges approximately 4-6:1;
- performing a second step, using plasma of N2H2 and O2, at a second temperature higher than the first temperature;
- and
- performing a third step using plasma of N2H2 alone.
5 more elements
A method, comprising:
- forming a first photoresist pattern over a polysilicon layer, the first photoresist pattern exposing a first portion of the polysilicon layer;
- implanting first impurities into the first portion of the polysilicon layer using the first photoresist pattern as an ion implantation barrier;
- removing the first photoresist pattern using plasma of a gas mixture including diimide (N2H2);
- forming a second photoresist pattern over the polysilicon layer, the second photoresist pattern exposing a second portion of the polysilicon layer other than the first portion;
- implanting second impurities into the second portion of the polysilicon layer using the second photoresist pattern as an ion implantation barrier;
- and
- removing the second photoresist pattern using plasma of a gas mixture including N2H2, the removing the second photoresist pattern comprising:
- performing a first step at a first temperature using plasma of N2H2 and oxygen (O2), wherein a ratio of the N2H2 to the O2 ranges approximately 4-6:1;
- performing a second step, using plasma of a gas including N2H2 and O2, at a second temperature higher than the first temperature;
- and
- performing a third step using plasma of N2H2 alone.
8 more elements
Dependencies are inferred from the claim text.